Description
Teknologi Trench & Field stop 1200V, Vcesat rendah, Bal mudah, Koefisien suhu positif
Place of Origin
Zhejiang, China
Package / Case
Warna dasar
Operating Temperature
-40 ℃ ~ + 175 ℃
Supplier Type
original manufacturer, ODM
Media Available
datasheet, Photo
Brand
IGBT WAFER AKGW225T120B
Current - Collector (Ic) (Max)
225A
Voltage - Collector Emitter Breakdown (Max)
1200V
Vce Saturation (Max) @ Ib, Ic
2.15
Operating Temperature
-40℃~+175℃
Current Rating (Amps)
225A
IGBT Type
Teknologi henti dan hujan
Transistor Type
Wafer IGBT
Maks. Chip yang mungkin per wafer
310
Ukuran mati
13.700*13.932mm2
VCE(sat) pada Ic = 110A
1.75-2.15V
VGE(th) @ IC = 5,3ma
5.3-6.5V
Input kapasitansi @ VCE = 25V
17.4nF
Arus kebocoran pemancar gerbang
100nA